2SA1535A

JMnic Product Specification Silicon PNP Power Transistors 2SA1535 2SA1535A DESCRIPTION ・With TO-220Fa package ・Complement to type 2SC3944/3944A ・Optimum for the driver-stage of a 60W to 100W output amplifier APPLICATIONS ・For low-frequency driver and high power amplification PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SA1535 VCBO Collector-base voltage 2SA1535A 2SA1535 VCEO Collector-emitter voltage 2SA1535A VEBO IC ICM PC Emitter-base voltage Collector current Collector current-peak Ta=25℃ Collectorl power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 15 150 -55~150 ℃ ℃ Open collector Open base -180 -5 -1.0 -1.5 2.0 W V A A Open emitter -180 -150 V CONDITIONS VALUE -150 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA1535 V(BR)CEO Collector-emitter breakdown voltage 2SA1535A V(BR)EBO VCEsat VBEsat ICBO hFE-1 hFE-2 fT COB Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain DC current gain Transition frequency Output capacitance IC=-0.1mA; IB=0 IE=-10μA; IC=0 IC=-0.5 A;IB=-50m A IC=-0.5 A;IB=-50m A VCB=-150V; IE=0 IC=-150mA ; VCE=-10V IC=-500mA ; VCE=-5V IC=-50mA ; VCB=-10V IE=0; VCB=-10V;f=1MHz CONDITIONS IC=-1mA; IB=0 2SA1535 2SA1535A MIN -150 TYP. MAX UNIT V -180 -5 -2.0 -2.0 -10 90 50 200 30 MHz pF 330 V V V μA hFE-1 classifications Q 90-155 R 130-220 S 185-330 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1535 2SA1535A Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1535 2SA1535A 4