JMnic
Product Specification
Silicon PNP Power Transistors
2SA1598
DESCRIPTION ・With ITO-220 package ・Switching power transistor ・Low collector saturation voltage
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -40 -7 -7 -14 -1.5 -2 25 150 -55~150 UNIT V V V A A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 5.0 UNIT ℃/W
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1598
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO Collector cut-off current ICEO IEBO hFE fT Emitter cut-off current DC current gain Transition frequency At rated volatge IC=-3.5A ; VCE=-2V IC=-0.7A ; VCE=-10V 70 50 MHz -0.1 mA At rated volatge -0.1 mA PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=-0.1A ;IB=0 IC=-3.5A; IB=-0.2A IC=-3.5A; IB=-0.2A MIN -40 -0.3 -1.2 TYP. MAX UNIT V V V
Switching times ton ts tf Turn-on time Storage time Fall time IC=-3.5A;IB1=-IB2=-0.35A , RL=8Ω;VBB2=-4V 0.3 1.5 0.5 μs μs μs
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1598
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
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