2SA1634

JMnic Product Specification Silicon PNP Power Transistors 2SA1634 DESCRIPTION ・With TO-220 package ・Complement to type 2SC4007 ・Low collector saturation voltage APPLICATIONS ・For medium speed,electrical supply and DC-DC converter applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -4 40 150 -55~150 UNIT V V V A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA1634 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-0.1mA ,IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V VBE sat Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-1A ; VCE=-4V 60 320 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 80 pF fT Transition frequency IC=-0.5A ; VCE=-12V 12 MHz hFE Classifications D 60-120 E 100-200 F 160-320 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1634 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3