JMnic
Product Specification
Silicon PNP Power Transistors
2SA1658
DESCRIPTION ・With TO-220F package ・Complement to type 2SC4369 ・Good linearity of hFE APPLICATIONS ・For general purpose applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -30 -30 -5 -3 -0.3 15 150 -55~150 UNIT V V V A A W ℃ ℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SA1658
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ; IB=0
-30
V
VCEsat
Collector-emitter saturation voltage
IC=-2A ;IB=-0.2A
-0.3
-0.8
V
VBE
Base-emitter on voltage
IC=-0.5A ; VCE=-2V
-0.75
-1.0
V
ICBO
Collector cut-off current
VCB=-20V; IE=0
-1.0
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1.0
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
70
240
hFE-2
DC current gain
IC=-2.5A ; VCE=-2V
25
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
40
pF
fT
Transition frequency
IC=-0.5A ; VCE=-2V
100
MHz
hFE-1 Classifications O 70-140 Y 120-240
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1658
Fig.2 Outline dimensions
3
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