JMnic
Product Specification
Silicon PNP Power Transistors
2SA1673
DESCRIPTION ・With TO-3PML package ・Complement to type 2SC4388 APPLICATIONS ・Audio and general purpose
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Fig.1 simplified outline (TO-3PML) and symbol
・
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -180 -180 -6 -15 -4 85 150 -55~150 UNIT V V V A A W ℃ ℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-5 A;IB=-0.5 A VCB=-180V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-12V IE=0; VCB=-10V;f=1MHz 50 20 500 MIN -180 TYP.
2SA1673
MAX
UNIT V
-2.0 -10 -10 180
V μA μA
MHz pF
Switching times ton ts tf Turn-on time Storage time Fall time IC=-10A;RL=4Ω IB1=-IB2=-1A VCC=-40V 0.60 0.90 0.20 μs μs μs
hFE classifications O 50-100 P 70-140 Y 90-180
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1673
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1673
4
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