2SA1695

JMnic Product Specification Silicon PNP Power Transistors 2SA1695 DESCRIPTION ・With TO-3PN package ・Complement to type 2SC4468 APPLICATIONS ・Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -6 -10 -4 100 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-50mA ;IB=0 IC=-5A ;IB=-0.5A VCB=-140V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IE=0 ; VCB=-10V,f=1MHz IC=-0.5A ; VCE=-12V 50 400 20 MIN -140 TYP. 2SA1695 MAX UNIT V -0.5 -10 -10 180 V μA μA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-5A;RL=12Ω IB1=- IB2=-0.5A VCC=-60V 0.17 1.86 0.27 μs μs μs hFE Classifications O 50-100 P 70-140 Y 90-180 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1695 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1695 4