2SA1741

JMnic Product Specification Silicon PNP Power Transistors 2SA1741 DESCRIPTION ・With TO-220F package ・Low collector saturation voltage APPLICATIONS ・For use as a driver in DC/DC converters and actuators PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Ta=25℃ PT Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -60 -7 -5 -10 -2.5 2.0 W UNIT V V V A A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-3A ;IB=-0.3A,L=1mH IC=-3A; IB=-0.15A IC=-4A; IB=-0.2A IC=-3A ;IB=-0.15A IC=-4A ;IB=-0.2A VCB=-60V ;IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IC=-1A ; VCE=-2V IC=-3A ; VCE=-2V IC=-0.5A ; VCE=-10V f=1MHz;VCB=-10V 100 100 60 80 MIN -60 2SA1741 TYP. MAX UNIT V -0.3 -0.5 -1.2 -1.5 -10 -10 V V V V μA μA 400 MHz pF 130 Switching times ton ts tf Turn-on time Storage time Fall time IC=-3.0A IB1=-IB2=-0.15A VCC=-30V ,RL=17Ω 0.3 1.5 0.3 μs μs μs hFE-2 Classifications M 100-200 L 150-300 K 200-400 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1741 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1741 4