2SA1757

JMnic Product Specification Silicon PNP Power Transistors 2SA1757 DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Wide area of safe operation APPLICATIONS ・For switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 1 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -60 -5 -5 -10 25 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO IEBO hFE Cob fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA , IB=0 IE=-50μA , IC=0 IC=-3A, IB=-0.15A IC=-4A, IB=-0.2A IC=-3A, IB=-0.15A IC=-4A, IB=-0.2A VCB=-100V, IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-2V IE=0 ; VCB=-10V,f=1MHz IC=-0.5A ; VCE=-10V 160 130 80 MIN -60 -5 TYP. 2SA1757 MAX UNIT V V -0.3 -0.5 -1.2 -1.5 -10 -10 320 V V V V μA μA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-3A ; RL=10Ω IB1=- IB2=-0.15A VCC≈-30V 0.3 1.5 0.3 μs μs μs 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1757 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3