2SA1771

JMnic Product Specification Silicon PNP Power Transistors 2SA1771 DESCRIPTION ・With TO-220F package ・Low collector saturation voltage ・High speed switching time APPLICATIONS ・High current switching PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS MAX -80 -80 -14 -12 -1.2 30 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-6A ;IB=-0.3A IC=-6A; IB=-0.3A VCB=-80V; IE=0 VEB=-14V; IC=0 IC=-1A ; VCE=-1V IC=-6A ; VCE=-1V IC=-1A ; VCE=-5V f=1MHz;VCB=-10V 100 40 50 300 MIN -80 2SA1771 TYP. MAX UNIT V -0.4 -1.2 -10 -10 320 V V μA μA MHz pF ton ts tf Turn-on time Storage time Fall time IB1=-IB2=-0.3A; VCC=-30V RL=5Ω Duty cycle≤1% 0.2 0.6 0.1 μs μs μs 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1771 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1771 4