2SA1803

JMnic Product Specification Silicon PNP Power Transistors 2SA1803 DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4688 APPLICATIONS ・Power amplifier applications ・Recommend for 40W high fidelity audio frequency amplifier output stage PINNING (see Fig.2 ) PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PFM) and symbol Emitter DESCRIPTION ・ Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -6 -12 -0.6 55 150 -55~150 UNIT V V V A A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-5A;IB=-0.5 A IC=-3A ; VCE=-5V VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-3A ; VCE=-5V IC=-1A ; VCE=-5V IE=0; VCB=-10V;f=1MHz 55 35 30 290 MIN -80 TYP. 2SA1803 MAX UNIT V -2.0 -1.5 -5 -5 160 V V μA μA MHz pF hFE-1 classifications R 55-110 O 80-160 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1803 Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1803 4