2SA1859

JMnic Product Specification Silicon PNP Power Transistors 2SA1859 2SA1859A DESCRIPTION ・With TO-220F package ・Complement to type 2SC4883/4883A APPLICATIONS ・For audio output driver and TV velocity-modulation applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SA1859 VCBO Collector-base voltage 2SA1859A 2SA1859 VCEO Collector-emitter voltage 2SA1859A VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -180 -6 -2 -1 20 150 -55~150 V A A W ℃ ℃ Open emitter -180 -150 V CONDITIONS VALUE -150 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA1859 IC=-10mA ; IB=0 2SA1859A VCEsat Collector-emitter saturation voltage 2SA1859 2SA1859A IEBO hFE fT COB Emitter cut-off current DC current gain Transition frequency Output capacitance IC=-0.7A;IB=-70mA VCB=-150V;IE=0 VCB=-180V;IE=0 VEB=-6V; IC=0 IC=-0.7A ; VCE=-10V IC=-0.7A ; VCE=-12V IE=0 ; VCB=-10V;f=1MHz CONDITIONS 2SA1859 2SA1859A MIN -150 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -180 -1.0 -10 -10 -10 60 60 30 240 MHz pF V μA μA μA ICBO Collector cut-off current Switching time ton ts tf Turn-on time Storage time Fall time IC=-1A ;IB1=-IB2=-0.1A VCC=-20V ,RL=20Ω 0.50 1.00 0.50 μs μs μs 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1859 2SA1859A Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1859 2SA1859A 4