2SA1860

JMnic Product Specification Silicon PNP Power Transistors 2SA1860 DESCRIPTION ・With TO-3PML package ・Complement to type 2SC4886 APPLICATIONS ・Audio and general purpose PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Fig.1 simplified outline (TO-3PML) and symbol Base ・ Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -14 -3 80 150 -55~150 UNIT V V V A A W ℃ ℃ 1 JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-25mA; IB=0 IC=-5 A;IB=-0.5 A VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IC=-2A ; VCE=-12V IE=0; VCB=-10V;f=1MHz 50 50 MIN -150 2SA1860 TYP. MAX UNIT V -2.0 -100 -100 180 V μA μA MHz pF 400 Switching times ton ts tf Turn-on time Storage time Fall time IC=-5A;RL=12Ω IB1=-IB2=-0.5A VCC=-60V 0.25 0.85 0.20 μs μs μs hFE classifications O 50-100 P 70-140 Y 90-180 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1860 Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1860 4