JMnic
Product Specification
Silicon PNP Power Transistors
2SA1908
DESCRIPTION ・With TO-3PML package ・Complement to type 2SC5100 APPLICATIONS ・Audio and general purpose
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Fig.1 simplified outline (TO-3PML) and symbol Base
・
Absolute maximum ratings(Tc=25℃)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -6 -8 -3 75 150 -55~150 UNIT V V V A A W ℃ ℃
1
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-3 A;IB=-0.3 A VCB=-120V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-12V IE=0; VCB=-10V;f=1MHz 50 20 300 MIN -120
2SA1908
TYP.
MAX
UNIT V
-0.5 -10 -10 180
V μA μA
MHz pF
Switching times ton ts tf Turn-on time Storage time Fall time IC=-4A;RL=10Ω IB1=-IB2=-0.4A VCC=-40V 0.14 1.40 0.21 μs μs μs
hFE classifications O 50-100 P 70-140 Y 90-180
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1908
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1908
4
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