2SA1986

JMnic Product Specification Silicon PNP Power Transistors 2SA1986 DESCRIPTION ・With TO-3P(I) package ・Complement to type 2SC5358 APPLICATIONS ・Power amplifier applications ・Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION ・ Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -230 -230 -5 -15 -1.5 150 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA1986 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -230 V VCEsat VBE Collector-emitter saturation voltage IC=-8 A;IB=-0.8A IC=-7A ; VCE=-5V -3.0 V Base-emitter voltage -1.5 V μA μA ICBO Collector cut-off current VCB=-230V; IE=0 -5 IEBO Emitter cut-off current VEB=-5V; IC=0 -5 hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160 hFE-2 DC current gain IC=-7A ; VCE=-5V 35 fT COB Transition frequency IC=-1A ; VCE=-5V IE=0; VCB=-10V;f=1MHz 30 MHz Output capacitance 360 pF hFE-1 classifications R 55-110 O 80-160 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1986 Fig.2 Outline dimensions 3 JMnic Silicon PNP Power Transistors 2SA1986 4