2SA1988

JMnic Product Specification Silicon PNP Power Transistors 2SA1988 DESCRIPTION ・With TO-3PN package ・High collector-emitter voltage APPLICATIONS ・For audio frequency power amplifier and industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -200 -200 -5 -7 -10 100 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-200V; IE=0 VEB=-3V; IC=0 IC=-1A ; VCE=-5V IC=-3.5A ; VCE=-5V IE=0 ; VCB=-10V,f=1MHz IC=-1A ; VCE=-5V 70 20 270 40 MIN TYP. -0.6 -1.3 2SA1988 MAX -2.0 -2.0 -50 -50 200 UNIT V V μA μA pF MHz 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1988 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1988 4