2SA2031

JMnic Product Specification Silicon PNP Power Transistors 2SA2031 DESCRIPTION ・With TO-3PN package ・Complement to type 2SC5669 ・Wide area of safe operation ・Large current capacitance APPLICATIONS ・For audio frequency output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collectorl power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 140 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -250 -230 -6 -15 -30 2.5 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA2031 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞ -230 V V(BR)CBO Collector-base breakdown voltage IC=-5mA; IE=0 -250 V V(BREBO Emitter-base breakdown voltage IE=-5mA; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-7.5 A;IB=-0.75A -0.3 -2.0 V VBE Base-emitter saturation voltage IC=-7.5A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-250V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 60 160 hFE-2 DC current gain IC=-7.5A ; VCE=-5V 35 COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 400 pF fT Transition frequency IC=-1A ; VCE=-5V 10 MHz Switching times ton Turn-on time IC=-7.5A;RL=6.67Ω IB1=-IB2=-0.75A VCC=-50V 0.45 μs tstg Storage time 1.75 μs tf Fall time 0.25 μs 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA2031 Fig.2 Outline dimensions (unindicated tolerance:±0.1mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SA2031 4