2SA483

JMnic Product Specification Silicon PNP Power Transistors 2SA483 DESCRIPTION ・With TO-66 package ・Complement to type 2SC783 ・High voltage: VCEO=-150V(min) APPLICATIONS ・Power amplifier applications ・Vertical output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -150 -150 -5 -1.5 1.5 20 150 -65~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA483 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -150 V V(BR)CBO Collector-base breakdown voltage IC=-0.5mA ;IE=0 -150 V VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -1.8 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-10V -1.8 V ICBO Collector cut-off current VCB=-150V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-0.1A ; VCE=-10V 30 240 COB Output capacitance IE=0 ; VCB=-10V;f=1.0MHz 50 pF fT Transition frequency IC=-0.1A ; VCE=-10V 10 MHz hFE Classifications R 30-80 O 70-140 Y 120-240 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA483 Fig.2 outline dimensions 3