2SA490

JMnic Product Specification Silicon PNP Power Transistors 2SA490 DESCRIPTION ・With TO-220 package ・Complement to type 2SC790 APPLICATIONS ・For power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -50 -40 -5 -3 3 25 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA490 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0 -40 V V(BR)EBO Emitter-base breakdown voltage IE=-10mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.45 -1.2 V VBE Base-emitter voltage IC=-2A ; VCE=-2V -0.85 -1.8 V μA μA ICBO Collector cut-off current VCB=-30V; IE=0 -10 IEBO Emitter cut-off current VEB=-5V; IC=0 -100 hFE-1 DC current gain IC=-0.5A ; VCE=-2V 40 240 hFE-2 DC current gain IC=-2A ; VCE=-2V 13 50 COB Collector output capacitance IE=0 ; VCB=-10V;f=1MHz 150 pF fT Transition frequency IC=-0.5A ; VCE=-2V 3 MHz hFE-1 Classifications R 40-80 O 70-140 Y 120-240 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA490 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3