2SA671

JMnic Product Specification Silicon PNP Power Transistors 2SA671 DESCRIPTION ・With TO-220 package ・Complement to type 2SC1061 ・Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -50 -50 -4 -3 -6 -0.5 25 150 -55~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 5.0 UNIT ℃/W JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA ,IB=0 IE=-5mA ,IC=0 IC=-2A; IB=-0.2A IC=-1A ; VCE=-4V VCB=-25V; IE=0 VEB=-4V; IC=0 IC=-0.1A ; VCE=-4V IC=-1A ; VCE=-4V IC=-0.5A ; VCE=-4V 35 35 5.0 MIN -50 -7 TYP. 2SA671 MAX UNIT V V -1.0 -1.5 -100 -100 320 V V μA μA MHz hFE-1 Classifications A 35-70 B 60-120 C 100-200 D 160-320 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA671 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3