2SA715

JMnic Product Specification Silicon PNP Power Transistors 2SA715 DESCRIPTION ・With TO-126 package ・Complement to type 2SC1162 APPLICATIONS ・Low frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ・ Absolute Maximun Ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -35 -35 -5 -2.5 -3 0.75 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA; RBE=∞ IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-2.0A ;IB=-0.2A(Pulse test) IC=-1.5A;VCE=-2V(Pulse test) VCB=-35V; IE=0 IC=-0.5A ; VCE=-2V IC=-1.5A ; VCE=-2V(Pulse test) IC=-0.2A ; VCE=-2V(Pulse test) 60 20 160 MIN -35 -35 -5 -0.5 -1.0 TYP. 2SA715 MAX UNIT V V V -1.0 -1.5 -20 320 V V μA MHz hFE-1 Classifications B 60-120 C 100-200 D 160-320 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA715 Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SA715 4