2SA740

JMnic Product Specification Silicon PNP Power Transistors 2SA740 DESCRIPTION ・With TO-220 package ・Complement to type 2SC1448 APPLICATIONS ・Power amplifier applications ・Vertical output applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IE PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -150 -150 -5 -1.5 1.5 1.5 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA740 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0 -150 V VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA -1.5 V VBE Base-emitter on voltage IC=-500mA ; VCE=-10V -1.0 V μA μA ICBO Collector cut-off current VCB=-100V; IE=0 -20 IEBO Emitter cut-off current VEB=-5V; IC=0 -10 hFE DC current gain IC=-500mA ; VCE=-10V 40 140 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 90 pF fT Transition frequency IC=-500mA ; VCE=-10V 8 MHz 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA740 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3