2SA743

JMnic Product Specification Silicon PNP Power Transistors 2SA743 2SA743A DESCRIPTION ・With TO-126 package ・Complement to type 2SC1212/1212A APPLICATIONS ・For low frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SA743 VCBO Collector-base voltage 2SA743A 2SA743 VCEO Collector- emitter voltage 2SA743A VEBO IC Emitter-base voltage Collector current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 8 150 -55～+150 ℃ ℃ Open collector Open base -80 -4 -1 0.75 W V A Open emitter -80 -50 V CONDITIONS VALUE -50 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA743 IC=-10mA ;RBE=∞ 2SA743A 2SA743 IC=-1mA ;IE=0 2SA743A IE=-1mA ;IC=0 IC=-1A ;IB=-0.1A IC=-50mA ; VCE=-4V 2SA743 2SA743A VCE=-50V; RBE=1kΩ VCE=-80V; RBE=1kΩ IC=-50mA ; VCE=-4V IC=-1A ; VCE=-4V IC=-30mA ; VCE=-4V CONDITIONS 2SA743 2SA743A MIN -50 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -80 -50 V -80 -4 -0.75 -0.65 -1.5 -1.0 -20 -20 60 20 120 MHz 200 V V V μA μA V(BR)CBO Collector-base breakdown voltage V(BR)EBO VCEsat VBE Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage ICER Collector cut-off current hFE-1 hFE-2 fT DC current gain DC current gain Transition frequency hFE-1 Classifications B 60-120 C 100-200 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA743 2SA743A Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SA743 2SA743A 4