2SA745A

JMnic Product Specification Silicon PNP Power Transistors 2SA744/745/745A DESCRIPTION ・With TO-3 package ・Complement to type 2SC1402/1403/1403A APPLICATIONS ・For power switching and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2SA744 VCBO Collector-base voltage 2SA745 2SA745A 2SA744 VCEO Collector-emitter voltage 2SA745 2SA745A VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -80 -100 -120 -80 -100 -120 -6 -8 -3 70 150 -65~150 V A A W ℃ ℃ V V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA744 V(BR)CEO Collector-emitter breakdown voltage 2SA745 2SA745A VCEsat Collector-emitter saturation voltage 2SA744 ICBO Collector cut-off current 2SA745 2SA745A IEBO hFE fT Emitter cut-off current DC current gain Transition frequency IC=-3A; IB=-0.3A VCB=-80V; IE=0 VCB=-100V; IE=0 VCB=-120V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-12V IC=-50mA ;IB=0 CONDITIONS 2SA744/745/745A MIN -80 -100 -120 TYP. MAX UNIT V -1.5 V -1.0 mA -1.0 30 15 mA MHz Switching times tr ts tf Rise time Storage time Fall time IC=-3A;RL=4Ω IB1=-0.2A; IB2=0.1A VCC=-12V 1.2 2.0 0.55 μs μs μs 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA744/745/745A Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3