2SA753

JMnic Product Specification Silicon PNP Power Transistors 2SA753 DESCRIPTION ・With TO-3 package ・Wide area of safe operation ・Complement to type 2SC1343 APPLICATIONS ・For 100W audio amplifier power output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -140 -110 -5 -10 -12 100 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA ;RBE=∞ IC=-5mA ;IE=0 IE=-5mA ;IC=0 IC=-5A; IB=-1A IC=-1A ; VCE=-5V VCB=-30V; IE=0 IC=-1A ; VCE=-5V IC=-10A ; VCE=-5V IC=-1A ; VCE=-5V 30 15 20 MIN -110 -140 -5 TYP. 2SA753 MAX UNIT V V V -1.5 -1.5 -1 200 V V mA MHz hFE-1 Classifications A 30-60 B 50-120 C 100-200 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA753 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3