2SA882

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA882 DESCRIPTION ・With TO-3 package ・Excellent Safe Operating Area APPLICATIONS ・For power and switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -130 -130 -5 -7 -100 150 -65~200 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.52 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA882 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 -130 V VCEsat-1 Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.0 V VCEsat-2 Collector-emitter saturation voltage IC=-7A ;IB=-1.5A -3.0 V VBE Base-emitter on voltage IC=-3A ; VCE=-4V -1.6 V ICBO Collector cut-off current VCE=-130V; IB=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-4V 40 hFE-2 DC current gain IC=-3A ; VCE=-4V 20 JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors PACKAGE OUTLINE 2SA882 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic