JMnic
Product Specification
Silicon PNP Power Transistors
2SA900
DESCRIPTION ・With TO-126 package ・Complement to type 2SC1568 ・Low collector saturation voltage APPLICATIONS ・For audio frequency power amplifier
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
・
Absolute Maximun Ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -20 -18 -5 -1 -2 1.2 150 -55~150 UNIT V V V A A W ℃ ℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO ICEO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA;IB=0 IC=-10μA ;IE=0 IE=-10μA ;IC=0 IC=-1A ;IB=-50mA IC=-500mA ;IB=-50mA VCB=-10V; IE=0 VCE=-18V; IB=0 IC=-500mA ; VCE=-2V IC=-1.5A ; VCE=-2V IE=0 ; VCB=-6V;f=1MHz IE=50mA ; VCB=-6V 90 50 40 200 MIN -18 -20 -5 TYP.
2SA900
MAX
UNIT V V V
-0.5 -1.2 -1 -10 470
V V μA μA
pF MHz
hFE-1 Classifications Q 90-155 R 130-210 S 180-280 T 250-360 U 330-470
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA900
Fig.2 Outline dimensions
3
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