2SA959

JMnic Product Specification Silicon PNP Power Transistors 2SA959 DESCRIPTION ・With TO-3 package ・Excellent safe operating area APPLICATIONS ・For high power audio ,stepping motor and other linear applications ・Relay or solenoid drviers ・DC-DC converters inverters PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -10 100 150 -65~200 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.98 UNIT ℃/W JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA959 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -100 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=-1m A ;IE=0 IE=-1mA ;IC=0 Emitter-base breakdown voltage VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.5A -2.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -0.1 mA hFE DC current gain IC=-5A ; VCE=-5V 30 200 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA959 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3