2SA963

JMnic Product Specification Silicon PNP Power Transistors 2SA963 DESCRIPTION ・With TO-126 package ・Complement to type 2SC2209 ・High collector power dissipation APPLICATIONS ・For low-frequency power amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ・ Absolute Maximun Ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -50 -40 -5 -1.5 -3 10 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA963 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-2mA;IB=0 -40 V V(BR)CBO VCEsat Collector-base breakdown voltage IC=-1mA ;IE=0 IC=-1.5A ;IB=-150mA -50 V Collector-emitter saturation voltage -1.0 V VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2A -1.5 V μA μA μA ICBO Collector cut-off current VCB=-20V; IE=0 -1 ICEO Collector cut-off current VCE=-10V; IB=0 -100 IEBO Emitter cut-off current VEB=-5V; IC=0 -10 hFE COB DC current gain IC=-1A ; VCE=-5V IE=0 ; VCB=-5V;f=1MHz 80 220 Output capacitance 70 pF fT Transition frequency IE=0.5A ; VCB=-5V,f=200MHz 150 MHz hFE Classifications Q 80-160 R 120-220 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA963 Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SA963 4