2SA968B

JMnic Product Specification Silicon PNP Power Transistors 2SA968 2SA968A 2SA968B DESCRIPTION ・With TO-220 package ・Complement to type 2SC2238 ・High breakdown votage APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SA968 VCBO Collector-base voltage 2SA968A 2SA968B 2SA968 VCEO Collector-emitter voltage 2SA968A 2SA968B VEBO IC IE PT Tj Tstg Emitter-base voltage Collector current Emitter current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -160 -180 -200 -160 -180 -200 -5 -1.5 1.5 25 150 -55~150 V A A W ℃ ℃ V V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA968 V(BR)CEO Collector-emitter breakdown voltage 2SA968A 2SA968B V(BR)EBO VCEsat VBE ICBO IEBO hFE Cob fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency IE=-1mA; IC=0 IC=-10mA; IB=0 2SA968 2SA968A 2SA968B CONDITIONS MIN -160 -180 -200 -5 TYP. MAX UNIT V V -1.5 -1.0 -1.0 -1.0 V V μA μA IC=-0.5A; IB=-50mA IC=-500mA ; VCE=-5V VCB=-160V ;IE=0 VEB=-5V; IC=0 IC=-100mA ; VCE=-5V IE=0 ; VCB=-10V,f=1MHz IC=-100mA ; VCE=10V 70 30 100 240 pF MHz hFE Classifications O 70-140 Y 120-240 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA968 2SA968A 2SA968B Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3