2SB1007

JMnic Product Specification Silicon PNP Power Transistors 2SB1007 DESCRIPTION ・With TO-126 package ・Complement to type 2SD1378 ・High breakdown voltage APPLICATIONS ・Low frequency power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Ta=25℃ PD Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -0.7 1.2 W UNIT V V V A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-2mA ;IB=0 IC=-50μA ;IE=0 IE=-50μA ;IC=0 IC=-0.5A ;IB=-50mA VCB=-50V; IE=0 VEB=-4V; IC=0 IC=-0.1A ; VCE=-3V IE=0; VCB=-10V;f=1MHz IE=50mA ; VCE=-10V 82 14 100 MIN -80 -80 -5 -0.2 TYP. 2SB1007 MAX UNIT V V V -0.4 -0.5 -0.5 390 20 V μA μA pF MHz hFE Classifications P 82-180 Q 120-270 R 180-390 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1007 Fig.2 Outline dimensions 3