2SB1009

JMnic Product Specification Silicon PNP Power Transistors 2SB1009 DESCRIPTION ・With TO-126 package ・Complement to type 2SD1380 APPLICATIONS ・For use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Ta=25℃ PD Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -40 -32 -5 -2 0.1 W UNIT V V V A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1009 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -32 V VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A -0.8 V VBEsat Base-emitter saturation voltage IC=-2.0A ;IB=-0.2A -2.0 V ICBO Collector cut-off current VCB=-20V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 40 hFE-2 DC current gain IC=-500mA ; VCE=-5V 82 390 fT Transition frequency IC=-500mA ; VCE=-5V 100 MHz COB Collector output capacitance f=1MHz ; VCB=-10V 50 pF 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1009 Fig.2 Outline dimensions 3