2SB1015

JMnic Product Specification Silicon PNP Power Transistors 2SB1015 DESCRIPTION ・With TO-220Fa package ・Collector power dissipation :PC=25W@TC=25℃ ・Low collector saturation voltage ・Complement to type 2SD1406 APPLICATIONS ・For audio frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -7 -3 -0.5 2.0 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(BR) VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA; IB=0 IC=-3A; IB=-0.3A IC=-0.5A ;VCE=-5V VCB=-60V; IE=0 VEB=-7V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC=-0.5A; VCE=-5V f=1MHz ; VCB=-10V 60 20 9 MIN -60 2SB1015 TYP. MAX UNIT V -1.7 -1.0 -100 -100 200 V V μA μA MHz pF 150 Switching times ton ts tf Trun-on time Storage time Fall time RL=15Ω;VCC=-30V IB1=-IB2=-0.2A Duty cycle≤1% 0.4 1.7 0.5 μs μs μs hFE-1 Classifications O 60-120 Y 100-200 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1015 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SB1015 4