2SB1034

JMnic Product Specification Silicon PNP Power Transistors 2SB1034 DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain ・DARLINGTON APPLICATIONS ・For power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current (DC) Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -8 -2 -0.5 15 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA ;IB=0 IC=-1A ;IB=-1mA IC=-1A ;IB=-1mA VCB=-80V; IE=0 VEB=-8V; IC=0 IC=-1A ; VCE=-2V IE=0; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-2V 2000 30 50 MIN -80 TYP. 2SB1034 MAX UNIT V -1.5 -2.0 -10 -4 V V μA mA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time RL=30Ω IB1=IB2=1mA VCC=-30V 0.4 2.0 0.4 μs μs μs 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1034 Fig.2 Outline dimensions 3