2SB1037

JMnic Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High allowable collector dissipation. ・Complement to type 2SD1459 APPLICATIONS ・For color TV vertical output, sound output applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SB1037 Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -1.5 -3 2.0 PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 175 -55~175 ℃ ℃ W UNIT V V V A A JMnic Product Specification Silicon NPN Power Transistors 2SB1037 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-offcurrent Emitter cut-offcurrent DC current gain Transition frequency CONDITIONS IC=-10mA ; IB=0 IC=-0.5A, IB=-50mA IC=-0.5A, IB=-50mA VCB=-120V;IE=0 VEB=-5V;IC=0 IC=-0.3A ; VCE=-5V IC=-0.1A ; VCE=-5V 70 15 MIN -150 -1.5 -1.2 -10 -10 200 MHz TYP MAX UNIT V V V μA μA hFE classifications Q 70-140 R 100-200 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SB1037 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification Silicon NPN Power Transistors 2SB1037 4