2SB1054

JMnic Product Specification Silicon PNP Power Transistors 2SB1054 DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1485 ・High transition frequency ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 3 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -5 -5 -8 60 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1054 MAX UNIT VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.3A -2.0 V VBE Base-emitter on voltage IC=-3A ; VCE=-5V -1.8 V μA μA ICBO Collector cut-off current VCB=-100V; IE=0 -50 IEBO Emitter cut-off current VEB=-3V; IC=0 -50 hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE -2 DC current gain IC=-1A ; VCE=-5V 40 200 hFE -3 DC current gain IC=-3A ; VCE=-5V 20 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 170 pF fT Transition frequency IC=-0.5A ; VCE=-5V 20 MHz hFE-2 classifications R 40-80 Q 60-120 P 100-200 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1054 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3