JMnic
Product Specification
Silicon PNP Power Transistors
2SB1054
DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1485 ・High transition frequency ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
・
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 3 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -5 -5 -8 60 W UNIT V V V A A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SB1054
MAX
UNIT
VCEsat
Collector-emitter saturation voltage
IC=-3A ;IB=-0.3A
-2.0
V
VBE
Base-emitter on voltage
IC=-3A ; VCE=-5V
-1.8
V μA μA
ICBO
Collector cut-off current
VCB=-100V; IE=0
-50
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-50
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
20
hFE -2
DC current gain
IC=-1A ; VCE=-5V
40
200
hFE -3
DC current gain
IC=-3A ; VCE=-5V
20
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
170
pF
fT
Transition frequency
IC=-0.5A ; VCE=-5V
20
MHz
hFE-2 classifications R 40-80 Q 60-120 P 100-200
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1054
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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