2SB1063

JMnic Product Specification Silicon PNP Power Transistors 2SB1063 DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1499 ・Wide area of safe operation ・High fT APPLICATIONS ・For high power amplifier applications PINNING PIN 1 2 3 Emitter Collector Base DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 40 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -5 -5 -8 2.0 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-3A ;IB=-0.3A IC=-3A ; VCE=-5V VCB=-100V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-3A ; VCE=-5V IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V; f=1MHz 20 40 20 MIN 2SB1063 TYP. MAX -2.0 -1.8 -50 -50 UNIT V V μA μA 200 20 170 MHz pF hFE-2 Classifications R 40-80 Q 60-120 P 100-200 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1063 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3