2SB1069

JMnic Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION ・With TO-220 package ・High speed switching ・Low collector saturation voltage APPLICATIONS ・For low-voltage switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SB1069 VCBO Collector-base voltage 2SB1069A 2SB1069 VCEO Collector-emitter voltage 2SB1069A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ Open collector Open base -40 -5 -4 -8 1.4 W V A A Open emitter -50 -20 V CONDITIONS VALUE -40 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SB1069 V(BR)CEO Collector-emitter breakdown voltage 2SB1069A VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=-2A; IB=-0.1A IC=-2A; IB=-0.1A VCB=-40V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-1A ; VCE=-2V IC=-0.5A ; VCE=-5V IC=-10mA ,IB=0 CONDITIONS 2SB1069 2SB1069A MIN -20 TYP. MAX UNIT V -40 -0.5 -1.5 -50 -50 45 60 150 260 MHz V V μA μA Switching times ton tstg tf Turn-on time Storage time Fall time IC=-2A; IB1=-IB2=-0.2A 0.3 0.4 0.1 μs μs μs hFE-2 classifications R 60-120 Q 90-180 P 130-260 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1069 2SB1069A Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3