2SB1075

JMnic Product Specification Silicon PNP Power Transistors 2SB1075 DESCRIPTION ・With TO-126 package ・High collector-peak current ・Low collector saturation voltage APPLICATIONS ・For audio frequency output amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Total power dissipation Junction temperature Storage temperature Ta=25℃ Open emitter Open base Open collector CONDITIONS VALUE -50 -40 -5 -2 -4 1.2 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO ICEO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-2mA ;IB=0 IC=-1mA ;IE=0 IC=-3.0A; IB=-0.3A*2 IC=-2.0A ;IB=-0.2A*2 VCB=-50V; IE=0 VCE=-10V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V*2 IC=-0.5A ; VCE=-5V*2 IE=0; f=1MHz ; VCB=-20V 50 MIN -40 -50 2SB1075 TYP. MAX UNIT V V -1.0 -1.5 -1 -100 -10 220 150 40 V V μA μA μA MHz pF Note: *2 pulse test hFE Classifications P 50-100 Q 80-160 R 120-220 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1075 Fig.2 Outline dimensions 3