2SB1094

JMnic Product Specification Silicon PNP Power Transistors 2SB1094 DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1585 APPLICATIONS ・Ideal for power supplies or variety or in audio and other equipment PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 15 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -7 -3 -5 -0.6 2.0 W UNIT V V V A A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-30mA; IB=0 IC=-2A ;IB=-0.2A IC=-2A ;IB=-0.2A VCB=-60V; IE=0 VEB=-7V; IC=0 IC=-50mA ; VCE=-5V IC=-0.5A ; VCE=-5V IC=-0.1A; VCE=-5V f=1MHz ; VCB=-10V 20 40 MIN -60 2SB1094 TYP. MAX UNIT V -1.5 -2.0 -10 -10 V V μA μA 200 20 70 MHz pF hFE-2 Classifications M 40-80 L 60-120 K 100-200 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1094 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3