2SB1101

JMnic Product Specification Silicon PNP Power Transistors 2SB1101 DESCRIPTION ・With TO-220 package ・Complement to type 2SD1601 ・DARLINGTON ・High DC current gain APPLICATIONS ・For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -7 -4 -8 40 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1101 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50mA ,IC=0 -7 V VCEsat -1 Collector-emitter saturation voltage IC=-2A; IB=-4mA -1.5 V VCEsat -2 Collector-emitter saturation voltage IC=-4A; IB=-40mA -3.0 V VBEsat-1 Base-emitter saturation voltage IC=-2A; IB=-4mA -2.0 V VBEsat-2 Base-emitter saturation voltage IC=-4A; IB=-40mA -3.5 V μA μA ICBO Collector cut-off current VCB=-60V; IE=0 VCE=-50V; RBE=∞ -100 ICEO Collecto cut-off current -10 hFE DC current gain IC=-2A ; VCE=-3V 1000 20000 VD Diode forward voltage ID=4A; 3.0 V Switching times ton ts tf Turn-on time Storage time Fall time IC=-2A IB1=-IB2=-4mA 0.8 4.0 1.0 μs μs μs 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1101 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3