2SB1134

JMnic Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1667 ・Low collector saturation voltage APPLICATIONS ・Relay drivers,high-speed inverters and other general high-current switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SB1134 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS MAX -60 -50 -6 -5 -9 2 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA ;RBE=∞ IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-3A; IB=-0.3A VCB=-40V ;IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-3A ; VCE=-2V IE=0 ; VCB=-10V; f=1MHz IC=-1A ; VCE=-5V 70 30 MIN -50 -60 -6 2SB1134 TYP. MAX UNIT V V V -0.4 -100 -100 280 V μA μA 160 30 pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-2.0A; IB1=-IB2=-0.2A 0.1 0.7 0.2 μs μs μs hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1134 Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SB1134 4