2SB1160

JMnic Product Specification Silicon PNP Power Transistors 2SB1160 DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1715 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -9 -15 100 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE -2 hFE -3 COB fT PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-7A ;IB=-0.7A IC=-7A ; VCE=-5V VCB=-150V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 20 60 20 330 20 MIN TYP. 2SB1160 MAX -2.0 -1.8 -50 -50 UNIT V V μA μA 200 pF MHz hFE-2 classifications Q 60-120 S 80-160 P 100-200 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1160 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SB1160 4