2SB1162

JMnic Product Specification Silicon PNP Power Transistors 2SB1162 DESCRIPTION ・With TO-3PL package ・Complement to type 2SD1717 ・Excellent linearity of hFE ・Wide area of safe operation (ASO) ・High transition frequency fT APPLICATIONS ・For high power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -12 -20 3.5 PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 120 150 -55~150 ℃ ℃ W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-8A ;IB=-0.8A IC=-8A ; VCE=-5V VCB=-160V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-8A ; VCE=-5V IC=-0.5A ; VCE=-5V f=1MHz;VCB=-10V 20 60 20 20 210 MIN TYP. 2SB1162 MAX -2.0 -1.8 -50 -50 UNIT V V μA μA 200 MHz pF hFE-2 classifications Q 60-120 S 80-160 P 100-200 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1162 Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3