2SB1165

JMnic Product Specification Silicon PNP Power Transistors 2SB1165 DESCRIPTION ・With TO-126 package ・Complement to type 2SD1722 ・Low collector saturation voltage ・Fast switching time APPLICATIONS ・For use in relay drivers,high-speed inverters,converters. PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 20 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -6 -5 -8 1.2 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-1mA ;RBE=∞ IC=-10μA ;IE=0 IE=-10μA ;IC=0 IC=-3A; IB=-0.15A IC=-3A; IB=-0.15A VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-0.5A ; VCE=-2V IC=-4A ; VCE=-2V IC=-1A ; VCE=-5V IE=0; f=1MHz ; VCB=-10V 70 35 MIN -50 -60 -6 2SB1165 TYP. MAX UNIT V V V -0.28 -0.95 -0.55 -1.3 -1.0 -1.0 400 V V μA μA 130 60 MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time IC=-2A; IB1=-IB2=-0.2A VCC=25V 50 450 20 ns ns ns hFE-1 Classifications Q 70-140 R 100-200 S 140-280 T 200-400 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1165 Fig.2 Outline dimensions 3