2SB1186

JMnic Product Specification Silicon PNP Power Transistors 2SB1186 DESCRIPTION ・With TO-220Fa package ・Low collector saturation votlage ・Complement to type 2SD1763 ・High breakdown voltage APPLICATIONS ・For use in low frequency power amplifer applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 20 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -1.5 -3.0 2.0 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1186 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 IC=-50μA; IE=0 IE=-50μA; IC=0 -120 V V(BR)CBO Collector-base breakdown voltage -120 V V(BR)EBO Emitter-base breakdown voltage -5 V VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-0.1A -2.0 V VBEsat Base-emitter saturation voltage IC=-1A ;IB=-0.1A -1.5 V μA μA ICBO Collector cut-off current VCB=-100V; IE=0 -1.0 IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 hFE DC current gain IC=-0.1A ; VCE=-5V 100 320 fT Transition frequency IC=-0.1A; VCE=-5V 50 MHz COB Collector output capacitance IE=0;f=1MHz ; VCB=-10V 30 pF hFE Classifications E 100-200 F 160-320 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1186 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3