2SB1192

JMnic Product Specification Silicon PNP Power Transistors 2SB1192 DESCRIPTION ・With TO-220Fa package ・High VCEO ・Large PC ・Complement to type 2SD1770 APPLICATIONS ・Power amplifier ・TV vertical deflection output PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -200 -150 -6 -1 -2 2 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1192 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-5mA , B=0 -150 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=-0.5mA ,IC=0 IC=-500mA; IB=-50mA -6 V Collector-emitter saturation voltage -1.0 V VBE Base-emitter on voltage IC=-300mA ; VCE=-10V -1.0 V μA μA ICBO Collector cut-off current VCB=-200V; IE=0 -50 IEBO Emitter cut-off current VEB=-4V; IC=0 -50 hFE-1 DC current gain IC=-100mA ; VCE=-10V 60 240 hFE-2 COB DC current gain IC=-300mA ; VCE=-10V IE=0 ; VCB=-10V,f=1MHz 50 Output capacitance 35 pF fT Transition frequency IC=-100mA ; VCE=-10V 20 MHz hFE-1 Classifications Q 60-140 P 100-240 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1192 Fig.2 Outline dimensions(unindicated tolerance:±0.15 mm) 3