2SB1194

JMnic Product Specification Silicon PNP Power Transistors 2SB1194 DESCRIPTION ・With TO-220Fa package ・High DC current gain ・High speed switching ・DARLINGTON ・Complement to type 2SD1633 APPLICATIONS ・For power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -7 -5 -8 -0.5 2 W UNIT V V V A A A JMnic Product Specification Silicon PNP Power Transistors 2SB1194 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-0.2A; RBE=∞ IC=-3A ;IB=-3mA IC=-3A ;IB=-3mA VCB=-100V; IE=0 VCE=-100V; IB=0 VEB=-7V; IC=0 IC=-3A ; VCE=-3V 1500 MIN -100 -1.5 -2.0 -100 -100 -5 10000 TYP. MAX UNIT V V V μA μA mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=-3A ;IB1=-IB2=-3mA VCC=-50V 3.0 5.0 3.0 μs μs μs hFE Classifications Q 1500-6000 P 4000-10000 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1194 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3