2SB1223

JMnic Product Specification Silicon PNP Power Transistors 2SB1223 DESCRIPTION ・With TO-220F package ・Complement to type 2SD1825 ・High DC current gain. ・Large current capacity and wide ASO. ・DARLINGTON APPLICATIONS ・Suitable for use in control of motor drivers, printer hammer drivers,and constant-voltage regulators. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -70 -60 -6 -4 -6 20 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1223 MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-5mA; IE=0 IC=-50mA; RBE=∞ -70 V V(BR)CEO Collector-emitter breakdown voltage -60 V VCEsat Collector-emitter saturation voltage IC=-2A ; IB=-4mA -1.0 -1.5 V VBEsat Base-emitter saturation voltage IC=-2A ; IB=-4mA -2.0 V ICBO Collector cut-off current VCB=-40V;IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V;IC=0 -3.0 mA hFE DC current gain IC=-2A ; VCE=-2V 2000 5000 fT Transition frequency IC=-2A ; VCE=-5V 20 MHz Switching times μs μs μs ton Turn-on time IC=500IB1=-500IB2=-2A VCC=-20V ,RL=10Ω 0.5 tstg Storage time 1.4 tf Fall time 1.2 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1223 Fig.2 Outline dimensions 3