2SB1225

JMnic Product Specification Silicon PNP Power Transistors 2SB1225 DESCRIPTION ・With TO-220F package ・Complement to type 2SD1827 ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage. ・DARLINGTON APPLICATIONS ・Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -70 -60 -6 -10 -15 30 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors 2SB1225 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-5mA; IE=0 IC=-50mA; RBE=∞ IC=-5A ; IB=-10mA IC=-5A ; IB=-10mA VCB=-40V;IE=0 VEB=-5V;IC=0 IC=-5A ; VCE=-2V 2000 5000 MIN -70 -60 -1.0 -1.5 -2.0 -0.1 -3.0 TYP. MAX UNIT V V V V mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=5A; IB1=0.01A -IB2=0.01A VCC=20V ,RL=4Ω 0.5 1.5 1.7 μs μs μs 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1225 Fig.2 Outline dimensions 3