2SB1230

JMnic Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Complement to type 2SD1840 ・Low collector saturation voltage APPLICATIONS ・Motor drivers,relay drivers,converters and other general high-current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SB1230 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current -peak Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 100 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -110 -100 -6 -15 -25 -5 3.0 W UNIT V V V A A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=-5mA;RBE=∞ MIN TYP. 2SB1230 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage -100 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -110 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.6A -0.8 V VBE sat Base-emitter saturation voltage IC=-6A; IB=-0.6A -1.5 V μA μA ICBO Collector cut-off current VCB=-100V; IE=0 -100 IEBO Emitter cut-off current VEB=-5V; IC=0 -100 hFE-1 DC current gain IC=-1.5A ; VCE=-2V 50 140 hFE-2 DC current gain IC=-6A ; VCE=-2V 20 hFE-1 Classifications P 50-100 Q 70-140 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1230 Fig.2 outline dimensions 3